sot223 pnp silicon planar high performance transistor issue 2 ? february 1995 features * 60 volt v ceo * 3 amp continuous current * low saturation voltage complementary type ? fzt651 partmarking detail ? FZT751 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v peak pulse current i cm -6 a continuous collector current i c -3 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -80 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -60 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =100 m a collector cut-off current i cbo -0.1 -10 m a m a v cb =-60v v cb =-60v, t amb =100c emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.15 -0.45 0.3 0.6 v v i c =-1a, i b =-100ma* i c =-3a, i b =-300ma* base-emitter saturation voltage v be(sat) -0.9 -1.25 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) -0.8 -1.0 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 70 100 80 40 200 200 170 150 300 i c =-50ma, v ce =-2v* i c =-500ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* transition frequency f t 100 140 mhz i c =-100ma, v ce =-5v f=100mhz switching times t on 40 ns i c =-500ma, v cc =-10v i b1 =i b2 =-50ma t off 450 ns output capacitance c obo 30 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT751 FZT751 c c e b 3 234 3 - 235 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v olts) 0.01 0.1 10 1 10 0 0.1 0.2 0.4 0.5 0.3 0.6 0.001 0.0001 i c /i b =10 i c - collector current (amps) h fe v i c h - g ain 0.01 0.1 1 v ce =2v 125 175 225 75 0 i c - collector current (amps) v be(sat) v i c v - ( v ol t s) 0.6 0.8 1.0 1.2 1.4 0.01 10 0.1 1 0.0001 0.001 i c /i b =10 i c - collector current (amps) v be(on) v i c v - ( v ol ts ) 0.6 0.8 1.0 1.2 0.4 0.01 10 0.1 1 0.0001 0.001 v ce =2v switching speeds i c - collector current (amps) s witc hi ng ti m e 0.1 1 i b1 =i b2 =i c /10 ts tf td tr ts ns 0 td tr tf ns 100 120 40 20 60 80 140 0 500 600 200 100 300 400 700 single pulse test at t amb =25c 0.1 100 1s 100ms 10 dc 0.01 v ce - collector emitter voltage (v) safe operating area 10ms 1ms 100 m s 110 0.1 1
sot223 pnp silicon planar high performance transistor issue 2 ? february 1995 features * 60 volt v ceo * 3 amp continuous current * low saturation voltage complementary type ? fzt651 partmarking detail ? FZT751 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v peak pulse current i cm -6 a continuous collector current i c -3 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -80 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -60 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =100 m a collector cut-off current i cbo -0.1 -10 m a m a v cb =-60v v cb =-60v, t amb =100c emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.15 -0.45 0.3 0.6 v v i c =-1a, i b =-100ma* i c =-3a, i b =-300ma* base-emitter saturation voltage v be(sat) -0.9 -1.25 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) -0.8 -1.0 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 70 100 80 40 200 200 170 150 300 i c =-50ma, v ce =-2v* i c =-500ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* transition frequency f t 100 140 mhz i c =-100ma, v ce =-5v f=100mhz switching times t on 40 ns i c =-500ma, v cc =-10v i b1 =i b2 =-50ma t off 450 ns output capacitance c obo 30 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT751 FZT751 c c e b 3 234 3 - 235 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v olts) 0.01 0.1 10 1 10 0 0.1 0.2 0.4 0.5 0.3 0.6 0.001 0.0001 i c /i b =10 i c - collector current (amps) h fe v i c h - g ain 0.01 0.1 1 v ce =2v 125 175 225 75 0 i c - collector current (amps) v be(sat) v i c v - ( v ol t s) 0.6 0.8 1.0 1.2 1.4 0.01 10 0.1 1 0.0001 0.001 i c /i b =10 i c - collector current (amps) v be(on) v i c v - ( v ol ts ) 0.6 0.8 1.0 1.2 0.4 0.01 10 0.1 1 0.0001 0.001 v ce =2v switching speeds i c - collector current (amps) s witc hi ng ti m e 0.1 1 i b1 =i b2 =i c /10 ts tf td tr ts ns 0 td tr tf ns 100 120 40 20 60 80 140 0 500 600 200 100 300 400 700 single pulse test at t amb =25c 0.1 100 1s 100ms 10 dc 0.01 v ce - collector emitter voltage (v) safe operating area 10ms 1ms 100 m s 110 0.1 1
|
